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Fuji PD10M44OH7B06

Fuji PD10M44OH7B06
#PD10M44OH7B06 Fuji PD10M44OH7B06 New IGBT Module Dual 85A 450V/500VDual, PD10M44OH7B06 pictures, PD10M44OH7B06 price, #PD10M44OH7B06 supplier
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Email: sales@shunlongwei.com

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PD10M44OH7B06 FEATURES
* Dual MOS FETs Cascaded Circuit
*  Prevented  Body  Diodes  of  MOSFETs  bySBDs,   and   Ultra   Fast   Recovery   DiodesConnected in Parallel   
 * 300KHz High Speed Switching Possible   TYPICAL APPLICATIONS   
* Power Supply for the Communications and  the Induction Heating
Maximum ratings and characteristics 
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:500V
Gate-Emitter voltage VGES:±20V
Collector current Ic:85A
Collector current Icp:800A
Collector power dissipation Pc:1270W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m

IGBT Module Dual 85A 450V/500VDual

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