#FP10R12W1T4 EUPEC FP10R12W1T4 New Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23, FP10R12W1T4 pictures, FP10R12W1T4 price, #FP10R12W1T4 supplier
-------------------------------------------------------------------
Email: [email protected]
-------------------------------------------------------------------
-------------------------------------------------------------------
Email: [email protected]
Manufacturer Part Number: FP10R12W1T4
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X23
Pin Count: 23
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.51
Case Connection: ISOLATED
Collector Current-Max (IC): 20 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X23
Number of Elements: 7
Number of Terminals: 23
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 105 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: INFINEON TECHNOLOGIES AG
Part Package Code: MODULE
Package Description: FLANGE MOUNT, R-XUFM-X23
Pin Count: 23
ECCN Code: EAR99
Manufacturer: Infineon Technologies AG
Risk Rank: 5.51
Case Connection: ISOLATED
Collector Current-Max (IC): 20 A
Collector-Emitter Voltage-Max: 1200 V
Configuration: COMPLEX
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-XUFM-X23
Number of Elements: 7
Number of Terminals: 23
Operating Temperature-Max: 175 °C
Package Body Material: UNSPECIFIED
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Peak Reflow Temperature (Cel): NOT SPECIFIED
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 105 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Time
Insulated Gate Bipolar Transistor 20A I(C) 1200V V(BR)CES N-Channel MODULE-23
Comments
Post a Comment